Beijing MITSCN Co., Ltd.
Beijing MITSCN Co., Ltd
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RS6-535_555MBG (182-144 bifacial module with dual glass)
Suitable for ground power plants and distributed projects
Advanced module technology delivers superior module efficiency
·Gallium-doped Wafer·Non destructive cutting ·MBB half-cut
Excellent power generation performance
·Excellent IAM and Weak light response ·Low temperature ratings ·0.45% linear Power decline
High module quality ensures long-term reliability
·Strict selected material ·Advanced technology ·Leading standard
Ultra-hydrophilic self-cleaning coating techniques
| RS6-535MBG-E3 | RS6-540MBG-E3 | RS6-545MBG-E3 | RS6-550MBG-E3 | RS6-555MBG-E3 | |
| 535W | 540W | 545W | 550W | 555W | |
| 0~+5W | 0~+5W | 0~+5W | 0~+5W | 0~+5W | |
| 20.71% | 20.90% | 21.10% | 21.29% | 21.48% | |
| 12.90A | 12.97A | 13.04A | 13.12A | 13.19A | |
| 41.50V | 41.65V | 41.80V | 41.95V | 42.10V | |
| 13.78A | 13.85A | 13.92A | 13.98A | 14.04A | |
| 49.35V | 49.50V | 49.65V | 49.80V | 49.95V | |
| Values at Standard Test Conditions STC(AM1.5, Irradiance 1000W/m², Cell Temperature 25°C) | |||||
| Electrical Characteristics NOCT | RS6-535MBG-E3 | RS6-540MBG-E3 | RS6-545MBG-E3 | RS6-550MBG-E3 | RS6-555MBG-E3 |
| 399.9W | 403.6W | 407.4W | 411.1W | 414.8W | |
| 10.38A | 10.43A | 10.49A | 10.56A | 10.61A | |
| 38.55V | 38.69V | 38.83V | 38.97V | 39.11V | |
| 11.14A | 11.20A | 11.25A | 11.31A | 11.35A | |
| 46.40V | 46.54V | 46.68V | 46.82V | 46.97V | |
| NOCT , lrradiance of 800W/m², AM1.5, Ambient Temperature 20 °C, wind Speed 1m/s. | |||||
| Electrical Characteristics with 21% | RS6-535MBG-E3 | RS6-540MBG-E3 | RS6-545MBG-E3 | RS6-550MBG-E3 | RS6-555MBG-E3 |
| Maximum Power (Pmax) | 647W | 653W | 659W | 666W | 672W |
| Maximum Power Current (lmp) | 15.61A | 15.69A | 15.78A | 15.88A | 15.96A |
| Maximum Power Voltage (Vmp) | 41.50V | 41.65V | 41.80V | 41.95V | 42.10V |
| Short Circuit Current (lsc) | 16.67A | 16.76A | 16.84A | 16.92A | 16.99A |
| Open Circuit Voltage (Voc) | 49.35V | 49.50V | 49.65V | 49.80V | 49.95V |