Beijing MITSCN Co., Ltd.
Beijing MITSCN Co., Ltd
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RS3-445_465MBG(166-144 bifacial module with dual glass)
Suitable for ground power plants and distributed projects
Advanced module technology delivers superior module efficiency
·Gallium-doped Wafer·Non destructive cutting ·MBB half-cut
Excellent power generation performance
·Excellent IAM and Weak light response ·Low temperature ratings ·0.45% linear Power decline
High module quality ensures long-term reliability
·Strict selected material ·Advanced technology ·Leading standard
Ultra-hydrophilic self-cleaning coating techniques
| RS3-445MBG-E3 | RS3-450MBG-E3 | RS3-455MBG-E3 | RS3-460MBG-E3 | RS3-465MBG-E3 | |
| 445W | 450W | 455W | 460W | 465W | |
| 0~+5W | 0~+5W | 0~+5W | 0~+5W | 0~+5W | |
| 20.47% | 20.70% | 20.93% | 21.16% | 21.39% | |
| 10.78A | 10.85A | 10.92A | 10.98A | 11.05A | |
| 41.30V | 41.50V | 41.70V | 41.90V | 42.10V | |
| 11.53A | 11.60A | 11.66A | 11.73A | 11.79A | |
| 49.10V | 49.30V | 49.50V | 49.70V | 49.90V | |
| Values at Standard Test Conditions STC(AM1.5, Irradiance 1000W/m², Cell Temperature 25°C) | |||||
| Electrical Characteristics NOCT | RS3-445MBG-E3 334.3W | RS3-450MBG-E3 338.0W | RS3-455MBG-E3 341.8W | RS3-460MBG-E3 345.5W | RS3-465MBG-E3 349.3W |
| 8.70A | 8.75A | 8.81A | 8.86A | 8.91A | |
| 38.40V | 38.60V | 38.80V | 38.90V | 39.20V | |
| 9.35A | 9.41A | 9.46A | 9.51A | 9.56A | |
| 46.20V | 46.40V | 46.50V | 46.70V | 46.90V | |
| NOCT , lrradiance of 800W/m², AM1.5, Ambient Temperature 20 °C, wind Speed 1m/s. | |||||
| RS3-445MBG-E3 | RS3-450MBG-E3 | RS3-455MBG-E3 | RS3-460MBG-E3 | RS3-465MBG-E3 | |
| Maximum Power (Pmax) | 538.45W | 544.50W | 550.55W | 556.60W | 562.65W |
| Maximum Power Current (lmp) | 13.04A | 13.12A | 13.20A | 13.28A | 13.36A |
| Maximum Power Voltage (Vmp) | 41.30V | 41.50V | 41.70V | 41.90V | 42.10V |
| Short Circuit Current (lsc) | 13.95A | 14.04A | 14.11A | 14.19A | 14.27A |
| Open Circuit Voltage (Voc) | 49.10V | 49.30V | 49.50V | 49.70V | 49.90V |