Beijing MITSCN Co., Ltd.
Beijing MITSCN Co., Ltd
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RS3-445_460MXG(166-144 black bifacial module with dual glass)
Suitable for ground power plants and distributed projects
Advanced module technology delivers superior module efficiency
·Gallium-doped Wafer·Non destructive cutting ·MBB half-cut
Excellent power generation performance
·Excellent IAM and Weak light response ·Low temperature ratings ·0.45% linear Power decline
High module quality ensures long-term reliability
·Strict selected material ·Advanced technology ·Leading standard
Ultra-hydrophilic self-cleaning coating techniques
| RS3-445MXG-E3 | RS3-450MXG-E3 | RS3-455MXG-E3 | RS3-460MXG-E3 | |
| 445W | 450W | 455W | 460W | |
| 0~+5W | 0~+5W | 0~+5W | 0~+5W | |
| 20.47% | 20.70% | 20.93% | 21.16% | |
| 10.71A | 10.78A | 10.85A | 10.92A | |
| 41.55V | 41.74V | 41.94V | 42.12V | |
| 11.47A | 11.53A | 11.60A | 11.66A | |
| 49.30V | 49.50V | 49.70V | 49.90V | |
| Values at Standard Test Conditions STC(AM1.5, Irradiance 1000W/m², Cell Temperature 25°C) | ||||
| Electrical Characteristics NOCT | RS3-445MXG-E3 334.3W | RS3-450MXG-E3 338.0W | RS3-455MXG-E3 341.8W | RS3-460MXG-E3 345.6W |
| 8.65A | 8.71A | 8.76A | 8.82A | |
| 38.64V | 38.82V | 39.00V | 39.18V | |
| 9.29A | 9.35A | 9.41A | 9.46A | |
| 46.34V | 46.53V | 46.72V | 46.91V | |
| NOCT , lrradiance of 800W/m², AM1.5, Ambient Temperature 20 °C, wind Speed 1m/s. | ||||
| RS3-445MXG-E3 | RS3-450MXG-E3 | RS3-455MXG-E3 | RS3-460MXG-E3 | |
| Maximum Power (Pmax) | 538.45W | 544.50W | 550.55W | 556.60W |
| Maximum Power Current (lmp) | 12.96A | 13.04A | 13.13A | 13.21A |
| Maximum Power Voltage (Vmp) | 41.55V | 41.74V | 41.94V | 42.12V |
| Short Circuit Current (lsc) | 13.88A | 13.95A | 14.04A | 14.11A |
| Open Circuit Voltage (Voc) | 49.30V | 49.50V | 49.70V | 49.90V |