Beijing MITSCN Co., Ltd.
Beijing MITSCN Co., Ltd
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RS2-350_375MXG (166-120 black bifacial module with dual glass)
Suitable for ground power plants and distributed projects
Advanced module technology delivers superior module efficiency
·Gallium-doped Wafer·Non destructive cutting ·MBB half-cut
Excellent power generation performance
·Excellent IAM and Weak light response ·Low temperature ratings ·0.45% linear Power decline
High module quality ensures long-term reliability
·Strict selected material ·Advanced technology ·Leading standard
Ultra-hydrophilic self-cleaning coating techniques
| Electrical Characteristics STC | RS2-350MX-E3 | RS2-355MX-E3 | RS2-360MX-E3 | RS2-365MX-E3 | RS2-370MX-E3 | RS2-375MX-E3 |
| Maximum Power (Pmax) | 350W | 355W | 360W | 365W | 370W | 375W |
| Power Tolerance | 0~+5W | 0~+5W | 0~+5W | 0~+5W | 0~+5W | 0~+5W |
| 19.21% | 19.49% | 19.76% | 20.04% | 20.31% | 20.59% | |
| Maximum Power Current (Imp) | 10.52A | 10.58A | 10.64A | 10.70A | 10.76A | 10.82A |
| Maximum Power Voltage (Vmp) | 33.27V | 33.55V | 33.83V | 34.11V | 34.39V | 34.66V |
| Short Circuit Current (Isc) | 10.93A | 11.01A | 11.09A | 11.17A | 11.25A | 11.32A |
| Open Circuit Voltage (Voc) | 40.67V | 40.96V | 41.23V | 41.51V | 41.78V | 42.08V |
| Values at Standard Test Conditions STC(AM1.5, Irradiance 1000W/m2, Cell Temperature 25°C) | ||||||
| Electrical Characteristics NOCT | RS2-350MX-E3 | RS2-355MX-E3 | RS2-360MX-E3 | RS2-365MX-E3 | RS2-370MX-E3 | RS2-375MX-E3 |
| Maximum Power (Pmax) | 263W | 267W | 271W | 275W | 279W | 283W |
| Maximum Power Current (Imp) | 8.42A | 8.48A | 8.54A | 8.60A | 8.65A | 8.71A |
| Maximum Power Voltage (Vmp) | 31.24V | 31.49V | 31.73V | 31.98V | 32.25V | 32.49V |
| Short Circuit Current (Isc) | 8.80A | 8.87A | 8.94A | 9.01A | 9.09A | 9.15A |
| Open Circuit Voltage (Voc) | 38.23V | 38.50V | 38.76V | 39.02V | 39.27V | 39.55V |