Beijing MITSCN Co., Ltd.
Beijing MITSCN Co., Ltd
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RS2-350_375MG (166-120 module with dual glass)
Suitable for ground power plants and distributed projects
Advanced module technology delivers superior module efficiency
·Gallium-doped Wafer·Non destructive cutting ·MBB half-cut
Excellent power generation performance
·Excellent IAM and Weak light response ·Low temperature ratings ·0.45% linear Power decline
High module quality ensures long-term reliability
·Strict selected material ·Advanced technology ·Leading standard
Ultra-hydrophilic self-cleaning coating techniques
| Electrical Characteristics STC RS2-350MG-E3 | RS2-355MG-E3 | RS2-360MG-E3 | RS2-365MG-E3 | RS2-370MG-E3 | RS2-375MG-E3 |
| Maximum Power (Pmax) 350W | 355W | 360W | 365W | 370W | 375W |
| Power Tolerance 0~+5W | 0~+5W | 0~+5W | 0~+5W | 0~+5W | 0~+5W |
| 19.21% | 19.49% | 19.76% | 20.04% | 20.31% | 20.59% |
| Maximum Power Current (Imp) 10.58A | 10.64A | 10.70A | 10.76A | 10.82A | 10.89A |
| Maximum Power Voltage (Vmp) 33.00V | 33.30V | 33.60V | 33.90V | 34.20V | 34.40V |
| Short Circuit Current (Isc) 11.01A | 11.09A | 11.17A | 11.25A | 11.32A | 11.41A |
| Open Circuit Voltage (Voc) 40.50V | 40.70V | 40.90V | 41.10V | 41.30V | 41.50V |
| Values at Standard Test Conditions STC(AM1.5, Irradiance 1000W/m2, Cell Temperature 25°C) | |||||
| Electrical Characteristics NOCT RS2-350MG-E3 | RS2-355MG-E3 | RS2-360MG-E3 | RS2-365MG-E3 | RS2-370MG-E3 | RS2-375MG-E3 |
| Maximum Power (Pmax) 263W | 267W | 271W | 275W | 279W | 283W |
| Maximum Power Current (Imp) 8.48A | 8.54A | 8.60A | 8.65A | 8.71A | 8.77A |
| Maximum Power Voltage (Vmp) 31.10V | 31.30V | 31.50V | 31.80V | 32.00V | 32.20V |
| Short Circuit Current (Isc) 8.96A | 9.00A | 9.06A | 9.10A | 9.16A | 9.23A |
| Open Circuit Voltage (Voc) 37.70V | 38.00V | 38.30V | 38.60V | 38.90V | 39.10V |